256Mb MOBILE DDR SDRAM
AS4C16M16MD1 VDD/VDDQ = 1.7~1.95V
Data width: x16
Clock rate: 166MHz
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self-Refresh(ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
64 ms Refresh period
Interface: LVCMOS
60-ball FPBGA - (8.0X9.0 mm)
DC:1401