Silicon Dual P Channel MOS Type (U-MOSV)
Low drain-source ON-resistance: R
DS(ON) = 41 mΩ (typ.)
High forward transfer admittance: |Yfs| = 12 S (typ.)
Enhancement mode: V
th = −0.3 to −1.0 V (V
DS = −10 V, I
D = −1 mA)
V
DSS -20V
V
DGR -20V
V
GSS ±8V
I
D -3,8A
I
DP -15,2A
R
DS(ON) V
GS = −1.5 V, ID = −0.3 A 85 .. 144 mΩ
R
DS(ON) V
GS = −1.8 V, ID = −1.0 A 66 .. 90 mΩ
R
DS(ON) V
GS = −2.5 V, ID = −1.9 A 52 .. 60 mΩ
R
DS(ON) V
GS = −4.5 V, ID = −1.9 A 41 .. 46 mΩ
Ideal for H - Motorbridge
TPCP8303_datasheet_en_20131101.pdf