MA2J7280G
Schottky Barrier Diodes (SBD)
Silicon epitaxial planar type
For super high speed switching
For wave detection
Low forward voltage VF and good wave detection efficiency η
Small reverse current IR
Small temperature coefficient of forward characteristic
Reverse voltage (DC) VR 30 V
Peak reverse voltage VRM 30 V
Peak forward current IFM 150 mA
Forward current (DC) IF 30 mA
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C
Reverse current (DC) IR VR = 30 V 300 nA
Reverse recovery time * trr IF = IR = 10 mA 1.0 ns
MA2J7280G.pdf
Silicon epitaxial planar type
For super high speed switching
For wave detection
Low forward voltage VF and good wave detection efficiency η
Small reverse current IR
Small temperature coefficient of forward characteristic
Reverse voltage (DC) VR 30 V
Peak reverse voltage VRM 30 V
Peak forward current IFM 150 mA
Forward current (DC) IF 30 mA
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C
Reverse current (DC) IR VR = 30 V 300 nA
Reverse recovery time * trr IF = IR = 10 mA 1.0 ns
MA2J7280G.pdf